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| Transys Electronics LIMITED TO-252 Plastic-Encapsulate Transistors 2SB1261-Z FEATURES Power dissipation PCM: 2 W (Tamb=25) TRANSISTOR (PNP) TO-252 1. BASE 2. COLLECTOR Collector current -3 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55 to +150 3. EMITTER 1 23 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) hFE(3) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn on Time Switching Time Storage Time Fall Time VCE(sat) VBE(sat) unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=-100A, IE=0 Ic=-1mA, IB=0 IE=-100A, IC=0 VCB=-60V, IE=0 VEB=-7V, IC=0 VCE=-2V, IC=-200mA VCE=-2V, IC=-600mA VCE=-2V, IC=-2A IC=-1.5A, IB=-150mA IC=-1.5A, IB=-150mA VCE=-5V, IC=-1.5A VCB=-1.0V, IE=0, f=1MHz -60 -60 -7 -10 -10 60 100 50 -0.3 -1.2 120 30 0.5 400 A A V V MHz pF fT Cob ton tstg tf VCC=-10V, IC=-1A, IB1=-IB2=-0.1A 2.0 0.5 s CLASSIFICATION OF hFE(1) Rank Range M 100-200 L 160-320 K 200-400 |
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